Essays about: "spänningar"

Showing result 1 - 5 of 142 essays containing the word spänningar.

  1. 1. Unraveling Paradoxical Tensions in Digital Servitization Ecosystems : A case study in the mining industry

    University essay from Luleå tekniska universitet/Institutionen för ekonomi, teknik, konst och samhälle

    Author : Johannes Åström; Jakob Karlelid; [2024]
    Keywords : Digital servitization; Ecosystem; Paradoxes; Tensions; Digital tjänstefiering; Ekosystem; Paradoxer; Spänningar;

    Abstract : Purpose - This study aims to understand what paradoxical tensions arise within an ecosystem when companies collectively pursue digital servitization and how these tensions impact value co-creation. Method -  The study is an explorative single-case study based on the mining industry in Sweden and involves respondents from industry-leading organizations. READ MORE

  3. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Agnimitra Saha; [2023]
    Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

  4. 3. En metodstudie för lägre andel avverkningssprickor

    University essay from SLU/School for Forest Management

    Author : Emil Andersson; [2023]
    Keywords : kapsprickor; sågutbytesförlust; fällsprickor;

    Abstract : Denna undersökning är ett examensarbete gjort vid SLU, Skogsmästarskolan i Skinnskatteberg. Syftet med undersökningen var att hitta och definiera arbetsmetoder, tekniska hjälpmedel och rutiner som påverkar andelen avverkningssprickor i sågtimret. Undersökningen är begränsad till stora och mellanstora skördare i slutavverkning. READ MORE

  5. 4. Monitoring of Partial Discharges on Cable Terminations : An experimental approach to evaluate non-conventional online PD measurement techniques

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Tony Sibo; [2023]
    Keywords : Monitoring; Partial discharges; Medium-voltage cable terminations; Sensor performance; Reliability evaluation; Infrared camera IR-camera ; Ultrasonic emission sensor AE-sensor ; Temperature and relative humidity sensor TRH-sensor ; High frequency current transformer HFCT ; Transient earth voltage antenna TEV-antenna ; Conventional VS non-conventional PD measurement techniques; Övervakning; Partiella urladdningar; Mellanspänningskabelslut; Evaluering av sensorprestanda; Utvärdering av systemets tillförlitlighet; Infraröd kamera; Ultraljudssensor; Temperatur- och relativ fuktighetssensor; Högfrekvent strömtransformator; Transient jordspänningsantenn; Konventionella vs icke-konventionella mättekniker;

    Abstract : The transmission of electric power over long distances has historically posed challenges. However, the advent of high-voltage engineering has not only addressed distance barriers and power losses in electricity transmission and distribution, but it has also significantly improved the efficiency and transmission capacity of power grids. READ MORE

  6. 5. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    University essay from KTH/Tillämpad fysik

    Author : Wilhelm Holmberg; [2023]
    Keywords : High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Abstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE