Essays about: "ingaas"

Showing result 11 - 15 of 25 essays containing the word ingaas.

  1. 11. Fabrication and Charaterisation of Finger Gates

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Daniel Svedbrand; [2017]
    Keywords : Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Abstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE

  3. 12. Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Andreas Malmgren; [2017]
    Keywords : FinFET; metalorganic vapor phase epitaxy; reciprocal space mapping; Technology and Engineering; Physics and Astronomy;

    Abstract : In this thesis, InGaAs fins with vertical sidewalls consisting of {110} facets were epitaxially grown on InP(111)B substrates using metalorganic vapor phase epitaxy. A lithography patterned hydrogen silsesquixane growth mask was used to promote the formation of vertical {110} facets during the growth. READ MORE

  4. 13. Simulation and TLM studies of vertical nanowire devices

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Albin Linder; [2017]
    Keywords : III-V; simulations; TLM; vertical; nanowire; devices; NWFET; InAs; InGaAs; Physics and Astronomy;

    Abstract : Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. READ MORE

  5. 14. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Lorenz Frevel; [2016]
    Keywords : nanowire; strain; piezoelectric effect; indium phosphide; InP; gallium indium arsenide; GaInAs; InGaAs; core-shell; radial heterostructure; Physics and Astronomy;

    Abstract : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). READ MORE

  6. 15. Vertical heterostructure III-V nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Adam Jönsson; [2016]
    Keywords : MOSFET; transistor; heterostructure; III-V; RF; semiconductor; silicon; fabrication; electronics; Technology and Engineering;

    Abstract : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. READ MORE